新威独家冠名支持，福利大放送～7月4日石墨烯国际云论坛开播倒计时9天

个人简介：Dr. Kostya Novoselov is the Professor of Material Science & Engineering at National University of Singapore. He was awarded the Nobel Prize for Physics in 2010 for his achievements with graphene. He is best known for isolating graphene at The University of Manchester in 2004. He is an established physicist, specialising in the area of condensed matter physics, mesoscopic physics and nanotechnology. He has broad research interests from mesoscopic phenomena in ferromagnets and superconductors to electronic properties if two-dimensional (2D) electron gas in GaAs/AlGaAs heterostructures and graphene. He also has got a vast background in nanofabrication and nanotechnology.Novoselov has published over 350 papers (mainly as the leading or the corresponding author) with more than 25 papers in Nature and Science, more than 45 Nature Physics, Nature Materials, Nature Nanotechnology and Nature Communications papers and 16 Physical Review Letters. He was also named among the 17 hottest researchers world-wide – “individuals who have published the greatest number of hot papers during 2012-2013” Kostya Novoselov made into a shortlist of scientists with multiple hot papers for the years 2007-2008 (shared second place with 13 hot papers) and 2009 (5th place with 12 hot papers).

报告简介：When one writes by a pencil, thin flakes of graphite are left on a surface. Some of them are only one angstrom thick and can be viewed as individual atomic planes cleaved away from the bulk. This strictly two dimensional material called graphene was presumed not to exist in the free state and remained undiscovered until a few years ago. In fact, there exists a whole class of such two-dimensional crystals. The most amazing things about graphene probably is that its electrons move with little scattering over huge (submicron) distances as if they were completely insensitive to the environment only a couple of angstroms away. Moreover, whereas electronic properties of other materials are commonly described by quasiparticles that obey the Schrödinger equation, electron transport in graphene is different: It is governed by the Dirac equation so that charge carriers in graphene mimic relativistic particles with zero rest mass. The very unusual electronic properties of this material as well as the possibility for it’s chemical modification make graphene a promising candidate for future electronic applications.Probably the most important “property” of graphene is that it has opened a floodgate of experiments on many other 2D atomic crystals: BN, NbSe2, TaS2, MoS2, etc. One can use similar strategies to those applied to graphene and obtain new materials by mechanical or liquid phase exfoliation of layered materials or CVD growth. An alternative strategy to create new 2D crystals is to start with an existing one (like graphene) and use it as an atomic scaffolding to modify it by chemical means (graphane and fluorographene are good examples). The resulting pool of 2D crystals is huge, and they cover a massive range of properties: from the most insulating to the most conductive, from the strongest to the softest.If 2D materials provide a large range of different properties, sandwich structures made up of 2, 3, 4 … different layers of such materials can offer even greater scope. Since these 2D-based heterostructures can be tailored with atomic precision and individual layers of very different character can be combined together, – the properties of these structures can be tuned to study novel physical phenomena (Coulomb drag, Hostadter butterfly, metal-insulator transition, etc) or to fit an enormous range of possible applications, with the functionality of heterostructure stacks is “embedded” in their design (tunnelling or hot-electron transistors, photovoltaic devices).

个人简介：Manish Chhowalla is the Goldsmiths’ Professor of Materials Science at the University of Cambridge. His research interests are in the fundamental studies of atomically thin two-dimensional transition metal dichalcogenides (TMDs). He has demonstrated that it is possible to induce phase transformations in atomically thin materials and utilize phases with disparate properties for field effect transistors, catalysis, and energy storage. Prof Chhowalla is a Fellow of the Materials Research Society, Institute of Physics and the Royal Society of Chemistry. He was the founding Editor in Chief of Applied Materials Today and is now the Associate Editor of ACS Nano. He has been on the Clarivate Highly Cited Researchers since 2016.

报告简介：The presence of off state current in bulk semiconductor devices is responsible for dissipation of substantial power, which is a function of the drive voltage and the leakage current. Decreasing the drive voltage to decrease the energy cost of transistors leads to substantial increase in the off state current (a decrease in voltage by 60mV leads a ten-fold increase in off state current). Novel device structures such as tunnel FETs (TFETs) coupled with negative capacitance gate electrodes could decrease the operating voltage and increase the on state current. 2D semiconductors are ideal materials for tunnel FETs but the lack of good n- and p-type contacts has hampered their progress. In this presentation, I will describe the realization of ultra-clean vdW contacts between 3D metals and single layer MoS2. Using scanning transmission electron microscopy (STEM) imaging, we show that the 3D metal and 2D MoS2 interface is atomically sharp with no detectable chemical interaction, suggesting van-der-Waals-type bonding between the metal and MoS2. We show that the contact resistance of indium electrodes is ~ 800 Ω-μm – amongst the lowest observed for metal electrodes on MoS2 and is translated into high performance FETs with mobility in excess of 160 cm2-V-s-1 at room temperature without encapsulation. We also demonstrate low contact resistance of 220 Ω-μm on 2D NbS2 and near ideal band offsets, indicative of defect free interfaces, in WS2 and WSe2. I will introduce 2D TMDs and their properties and then describe our efforts on making good contacts on 2D semiconductors. Finally, I will describe our recent collaboration on amorphous 2D materials for low dissipation interconnect materials.